Optoelectronic III-V Heterostructures by Gas-Source MBE.

Abstract

The objective of this research program was to grow by molecular beam epitaxy (MBE) quantum well heterostructures of the alloy InGaAsP and related materials for use in high performance devices. The first task was to grow InGaAsP/GaAs and InGaAsP/InP structures for shallow quantum well (QW) optical modulators and other optoelectronics devices. The second task was to develop selective-area regrowth techniques for lateral definition of complex optoelectronic integrated devices. The method of growth was gas-source MBE, a technique which we have previously shown to produce high quality QW heterostructures containing alternating layers of III-V arsenide and phosphides.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1996
Accession Number
ADA311266

Entities

People

  • Gary Y. Robinson

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Crystal Lattice Vibrations
  • Electronics Laboratories
  • Energy Bands
  • Heterojunctions
  • Modules (Electronics)
  • Optical Modulators
  • Optical Properties
  • Optics
  • Optoelectronic Devices
  • Optoelectronics
  • Power Electronics
  • Quantum Wells
  • Scattering
  • Semiconductors
  • Warning Systems

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing