Novel Crystal Growth of Wide Bandgap II-VI Compounds for Blue/Green Lasers by Molecular Beam Epitaxy.

Abstract

P-type doping of ZnSe by nitrogen on off-axis substrate orientations resulted in carrier concentrations higher than that of the conventional (100) orientation. Low threshold current density lasers grown on (511)A operated at room temperatures have been achieved. Photoluminescence of (511) ZnMgSeS layers and CdZnSe quantum wells exhibited stronger luminescence intensity than the conventional (100) orientation, indicating that less defects were incorporated during crystal growth. Flip-chip transfer of ZnSeS/ZnSe/CdZnSe light-emitting diode films from GaAs substrates to Si substrates with improved quantum efficiencies was demonstrated.

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Document Details

Document Type
Technical Report
Publication Date
Aug 10, 1995
Accession Number
ADA311446

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Compound Semiconductors
  • Crystal Growth
  • Electrical Engineering
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Laser Applications
  • Light Emitting Diodes
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • New York
  • Quantum Efficiency
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Quantum Computing