Silicon Optoelectronics.
Abstract
This silicon optoelectronics program is the first comprehensive investigation of a silicon compatible, optical interconnection technology. The objective of the program is to establish processes, compatible with integrated circuit fabrication, for the integration of photonic interconnection with silicon electronics. The diffusivity and the solubility of Er in silicon was measured and the Er-Si-O ternary phase diagram was determined. Split lot test structures confirmed that Er did not cross- contaminate adjacent wafer locations or adjacent wafers in the same lot. The contractor designed, fabricated, and tested the first Si:Er LED with sharp line electroluminescence at 1.54 microns, operating at 300K. To model device performance, the contractor developed a global theory of Er excitation by minority carrier recombination, and monolithically integrated Si:Er LEDs with waveguides and drive electronics to demonstrate the optical and electronic compatibility of Silicon Optoelectronics. The high index contrasts of Si/SiO2 provided excellent coupling efficiency with low optical loss on SOI (silicon-on-insulator) substrates. The best LED internal quantum efficiencies ranged from 1-5%. The 3 dB modulation rate cutoff for the LED/MOSFET structure was 25 kHz. An optical test bench to measure waveguide losses by the cut-back techniques was developed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1996
- Accession Number
- ADA311619
Entities
People
- L. C. Kimerling
Organizations
- Massachusetts Institute of Technology