Interface Properties of Wide Bandgap Semiconductor Structures.
Abstract
Nuclear transmutation of B to Li is being investigated for donor doping of diamond. Homoepitaxial (10)B enriched diamond films have been grown, characterized using Hall measurements and Raman and PL spectroscopies and neutron-irradiated at a dose of 3x10(exp 20)/sq cm. The field emission energy distribution was measured from a Mo field emitter before and after diamond coating. After coating, the Mo needle had a lower turn on voltage that WM attributed to the diamond crystals acting as micro-tips which enhanced the field. The turn on voltage further decreased after in vacuo annealing. Comparisons between the wetting characteristics of 6H-SiC(000l) sub si and Si(111) surfaces in various acids and bases were conducted. The 10:1 HF dipped Si(111) surfaces were hydrophobic; the (0001) sub si 6H-SiC surfaces were hydrophilic. Annealing of Si capped (0001 ) sub si 6H-SiC surfaces in UHV at 1100 deg C for 5 min. caused thermal desorption of the Si capping layer and the formation of (3 x 3) Si rich, oxygen free (0001) sub si 6H-SiC surfaces. p2
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1996
- Accession Number
- ADA311700
Entities
People
- J. Bernholc
- Robert F Davis
- Robert J. Nemanich
- Sarah S. Bedair
- Zlatko Sitar
Organizations
- North Carolina State University