Charge State of Ge-Related Point Defects in Oxidized SiGe Alloys.
Abstract
The first stage of this work focused on point defects in the oxide layer of oxidized SiGe alloys. An oxygen vacancy related defect, the Ge E' center, was found in oxides grown by thermal oxidation of SiGe. An annealing study showed that the center was unstable at temperatures just above room temperature (50 deg C). The results have been published in Applied Physics Letters 63, 3049 (1993) and, earlier, in a proceedings of the Materials Research Society (1992). The second part of the program addressed defects at the interface between SiGe and an overlying oxide. Both Si and Ge dangling bond centers, presumably resulting from dielectric-semiconductor mismatch, were shown to exist at the interface. The depth profile of the Ge center, which supports identification of this defect with an interface, was reported in a proceedings of the Materials Research Society (vol. 405, 1996). The significance of both the oxide and interfacial defects lies in their potential association with oxide hole traps and interface states, two entities which are known to hamper the success of pure Si-based devices. p1
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1996
- Accession Number
- ADA313300
Entities
People
- M. E. Zvanut
Organizations
- University of Alabama