Developments in Transistor Infrared Detectors,

Abstract

This article primarily introduces developmental trends in resistor infrared (IR) detector technology which includes HgCdTe optoelectronic diodes, Shottky-barrier light emitters, and GaAs/AlGaAs inter sub-band quantum trap optoelectronic conductors. The development of these IR devices are aimed at improving element and component capability, the manufacture of large electronic sweep arrays, increasing operational temperatures, reducing cost and making application easier. In addition, this article also compares the capabilities of different models of HgCdTe devices.

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Document Details

Document Type
Technical Report
Publication Date
Jul 24, 1996
Accession Number
ADA313320

Entities

People

  • Gao Deping

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Arrays
  • Costs
  • Crystal Lattices
  • Detection
  • Detectors
  • Energy Bands
  • Focal Plane Arrays
  • Focal Planes
  • Infrared Detection
  • Infrared Detectors
  • Long-Wavelength Infrared Radiation
  • Materials
  • Quantum Efficiency
  • Radiation
  • Transistors
  • Two Dimensional
  • Warning Systems

Fields of Study

  • Materials science

Readers

  • Joint Military Operations and Doctrine.
  • Naval Mine Countermeasure Systems Development.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing