Equipment for Selected Energy Epitaxial Deposition (SEED).
Abstract
We have constructed two Selected Energy Epitaxial Deposition (SEED) systems for the growth of wide bandgap semiconductors, specifically GaN and SiC. The first system is a seeded beam supersonic free-jet (SSJ) which will eventually be interfaced directly to our existing low-energy electron microscope (LEEM) to conduct in situ observations of the growth of epitaxial layers of GaN in real time. A beam intensity of 2 x 10 to the 19th power atoms/srrad/sec is obtained with a 500 sccm flow in the SSJ. With the beam seeded with 10% NH3 and a nozzle to substrate distance of 50 cm, this intensity corresponds to 1 x 10 to the 15th power molecules/cm squared/sec. The second instrument is a dual Colutron deposition system to provide mass-separated monoenergetic ion beams in the 5-20 eV range for direct ion-beam deposition. This involves the modification of our two existing Colutron ion-beam systems originally designed for low-energy ion-scattering spectrometry. The completed Colutron deposition system has been tested to produce an Ar+ ion beam at 20 eV with FWHM of 3 eV and an ion current density of minus 10 to the 12th power cm to the minus 2nd power s to the minus 1 power,
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1996
- Accession Number
- ADA313452
Entities
People
- E. Bauer
- I. S. Tsong
- R. B. Doak
Organizations
- Arizona State University