Diamond Deposition by Controlled Nucleation and Growth.
Abstract
Nucleation and growth of diamond were studied using microwave plasma, hot filament, and oxy-acetylene flame assisted CVD techniques. High quality as indicated by IR absorption and Raman spectra,diamond was achieved for optical applications. Sequential deposition and etching was applied to achieve high growth rate while maintaining good diamond quality. By the use of a high power density microwave plasma high rate, up to 50 micrometers/h, growth of diamond was achieved in a broad range of substrate temperature up to 1500C and methane concentration near 100%. RF plasma induced negative bias was applied to achieve high density diamond nucleation on electrically insulating optical windows such as sapphire.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 25, 1996
- Accession Number
- ADA313695
Entities
People
- Y. Tzeng
Organizations
- Auburn University