Single Crystal Epitaxial Germanium Based Ohmic Contact Structure for III-V and Nanoelectronic and Mesoscopic Devices.
Abstract
The single crystal epitaxial layer ohmic contacts are very promising in the fabrication of shallow junction nanoelectronic and mesoscopic devices based on III-V compounds. A single crystal Ge film is grown epitaxially on GaAs or InGaP lattice matched to GaAs and a Au or Pd layer is deposited on top of it using an Ultra High Vacuum (10(exp -9 -10 Torr) Electron Beam (UHV E-Beam) deposition system. The interface between the Ge and thermally cleaned GaAs or InGaP is almost atomically abrupt, smooth and oxide free, and there is a minimum of disruption of the underlying layers. When deposited at an appropriate temperature, the metals are highly oriented and have large grains. They can be diffused through the Ge film to initiate the formation on an ohmic contact in a controlled manner. A detailed analysis of interface quality, crystal structure and defect propagation in GaAs/Ge/Au, GaAs/Ge/Pd, InGaP/Ge structures is presented. High resolution Transmission Electron Microscopy (HRTEM), Double Crystal X-ray Diffraction (DXRD), Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used to characterize the materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1996
- Accession Number
- ADA313724
Entities
People
- Donald W. Eckart
- Kenneth A. Jones
- Luis M. Casas
- Madan Dubey
- Robert L. Pfeffer
Organizations
- United States Army Research Laboratory