Parallel Molecular Nanofabrication.
Abstract
Low energy electron enhanced etching (LE4) has been used to transfer a triangular lattice of 10 nm diameter holes, with lattice constant 22 nm, into (100) silicon with minimal etch damage to the silicon lattice. Fabrication of the hole pattern is guided by a protein crystal template. The periodically heterogeneous surface chemistry of the nanopatterned silicon facilitates the self-aggregation of an electron beam-deposited titanium film to form an ordered array of metal nanoclusters. The titanium aggregates are positioned in register at the LE4-determined hole sites.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 1996
- Accession Number
- ADA313727
Entities
People
- Kenneth Douglas
Organizations
- University of Colorado Boulder