Limited Reaction Processing: Heterostructure and Novel Device Fabrication.
Abstract
The primary motivation of this work has been to investigate the growth, fabrication, and device physics of Silicon-based Heterostructure Devices. The goal is to extend performance limitations of existing devices and to develop silicon-based heterojunction technology for the fabrication of new types of transistors (e.g. quantum devices). The basic device structures investigated in this work are the Si/SiGe Heterojunction Bipolar Transistor (HBT) and the Strained-Si n-MOSFET. Epitaxial layers are grown by the rapid thermal, low pressure chemical vapor deposition technique known as limited reaction processing. The research involves materials characterization and semiconductor processing, with an emphasis on obtaining a fundamental understanding of electronic properties and device physics. The specific problems studied in this research include characterizing minority carrier transport and heavy doping effects in Si/SiGe/Si HBTs, investigation of boron diffusion in SiGe, fabrication and analysis of the first high mobility, strained-Si MOSFETs, and preliminary study of the feasibility of adding carbon to SiGe layers to expand the opportunities for Column IV heterostructures. The HBT research was carried out in collaboration with Hewlett-Packard (Palo Alto, CA), and Motorola (Mesa, AZ) has maintained a strong interest in our work on the strained-Si MOSFET.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 03, 1996
- Accession Number
- ADA314191
Entities
People
- J. L. Hoyt
- James F. Gibbons
Organizations
- Stanford University