Hot Hole Relaxation in the SiGe System,

Abstract

A general formalism is presented to study hot carrier relaxation in the valence band of strained and unstrained semiconductors. The approach is based on a six-band k description of the valence band and an anisotropic Monte Carlo method. We show the results of our studies for the Si-Ge system. Carriers are initially injected in the split-off band and the carrier distribution is followed in time. Results are presented for energy-dependent energy relaxation time. The relaxation times for Si are about 10(exp -13) s while those for Ge are an order of magnitude higher. To study the effect of biaxial strain produced through epitaxy on energy relaxation times we present results for Si(0.8)Ge(0.2) on a (100) silicon substrate. This work is of relevance to the interpretation of pump-probe experiments, which are primarily dependent on the relaxation of the average of the carrier energy.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1996
Accession Number
ADA314232

Entities

People

  • J. M. Hinckley
  • J. Singh
  • K. Yeom

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Computer Science
  • Crystal Lattice Vibrations
  • Data Science
  • Electrical Engineering
  • Energy
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Materials
  • Monte Carlo Method
  • Relaxation Time
  • Scattering
  • Semiconductors
  • Substrates
  • Valence
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics