Quantum Transport: Silicon Inversion Layers and InAlAs-InGaAs Heterostructures,

Abstract

Using a real-time Green's functions formalism, we investigate the influence of depletion charge scattering on the room temperature mobility in scaled silicon metal-oxide-semiconductor field-effect transistors and low-temperature transport in In(0.4)Al(0.6)As-In(0.4)Ga(0.6)As modulation doped heterostructures. Our simulation results suggest that depletion charge scattering, which is usually ignored, has considerable impact on the electron transport in silicon inversion layers near the threshold gate voltage, even at room temperature. We also find that the weighting coefficients a and b (for the inversion and depletion charge densities) strongly depend on the substrate doping and deviate from that reported in the literature. In the case of modulation doped heterostructures, the low-temperature mobility is limited by alloy and Coulomb scattering. Intersubband scattering considerably affects the broadening of the states which, in turn, leads to mobility reduction.

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Document Details

Document Type
Technical Report
Publication Date
Sep 11, 1996
Accession Number
ADA314398

Entities

People

  • D. K. Terry
  • Dragica Vasileska
  • T. Eldridge

Organizations

  • Arizona State University

Tags

DTIC Thesaurus Topics

  • Charge Density
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Electron Density
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Low Temperature
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Surface Roughness
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing