Surface Modification of Structural Ceramics by Ion Implantation Annealing: Al2O3 and Si3N4.
Abstract
The near-surface regions of polycrystalline Si3N4 were modified by ion implantation and post-implantation annealing. Metallographically polished bars and disks 3 mm in diameter and ranging in thickness from 250 to 500 micrometers were implanted of co-implanted with Al(+) ,B(+) and N(+) to fluences up to 2 x 10(exp 16) ions//sq cm, using implantation energies up to 300 keV. Some of the implanted material was post-implantation annealed at temperatures in the neighborhood of 1100 deg C. The indentation fracture toughness was found to increase by more than 15% for certain combination of fluence, implantation species and post-implantation annealing temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 06, 1996
- Accession Number
- ADA316049
Entities
People
- Alan J. Ardell
Organizations
- University of California, Los Angeles