Student Support for Chemical Interdiffusion Studies at Pseudomorphic Interfaces.

Abstract

Uncertainty in the extent of solid solution formation in the SiC-AlN system has continued to exist for temperatures <2000 deg C. This uncertainty has been surmounted via chemical interdiffusion investigations between epitaxial, monocrystalline 2H-AlN(0001) films and their associated 6H-SiC(0001) substrates between 1700 deg and 1850 deg C. The characterization tools of Auger spectroscopy, transmission electron microscopy, and parallel electron energy loss spectroscopy have been employed to determine the diffusion profiles across the AlN/SiC interfaces. This research has found no evidence of interdiffusion between AlN and SiC and thus proven that pure AlN and SiC do not form measurable solid solutions below 1850 deg C.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1996
Accession Number
ADA316102

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electrons
  • Band Gaps
  • Diffusion
  • Electron Energy
  • Electron Microscopy
  • Electrons
  • Energy
  • Films
  • Materials
  • Materials Science
  • Measurement
  • Microscopy
  • Semiconductor Devices
  • Silicon Carbide
  • Solid Solutions
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene