Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.
Abstract
This project utilized a variety of experimental methods to produce thin films of SiGeC on Si for the purpose of creating a heteroepitaxial layer with a different energy bandgap on the substrate Si for applications to bipolar transistors. Growth was performed by combined ion and molecular beam deposition, by CVD and by C ion implantation. Up to 3 atomic percent C was successfully incorporated. Theoretical and experimental bandgaps decreased with increasing C content for up to 1.5 percent C.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1996
- Accession Number
- ADA316439
Entities
People
- James W. Mayer
Organizations
- Arizona State University