Strain-Induced Polarization Effects for III-V Heterostructure Device Applications.
Abstract
The effects of externally applied uniaxial stresses on 111-V double barrier resonant tunneling devices was studied experimentally and theoretically. Devices were fabricated on (001)- and (1 1 1)- oriented substrates and subjected to stresses in the plane and perpendicular to the plane of the wafer. The current vs. voltage characteristics of these devices were calculated in the framework of a model that takes into account stress effects on the bandstructure as well as piezoelectric effects. Good qualitative agreement between the experimental and theoretical results was achieved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 1996
- Accession Number
- ADA317004
Entities
People
- Marshal I. Nathan
- P. P. Ruden
Organizations
- University of Minnesota