High Density Low Power RTD/HBT and RTD/HFET Technologies for High Speed Computing.

Abstract

This program is directed towards the monolithic integration of resonant tunneling diodes (RTDs) and conventional heterostructure transistors, and the demonstration of high speed, low power, high functional-density circuits. This effort was carried out in close collaboration with MIT Lincoln Laboratory (LL). This team demonstrated lattice mismatched InGaAs/AlAs RTDs with high peak to valley current ratio (PVCR) and high current density capability, integrated with AlGaAs/Ga-As-based heterojunction bipolar transistors (HBTs) and hetero-structure field effect transistors (HFETs). We explored by simulation and experiment several novel digital integrated circuit approaches, based on this technology.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1996
Accession Number
ADA317075

Entities

People

  • K. C. Wang

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Current Density
  • Diodes
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Density
  • Logic Gates
  • Manufacturing
  • Nand Gates
  • Power Electronics
  • Resonant Tunneling Diodes
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology