Scanning Tunneling Microscopy and Spectroscopy of Bonding Mechanisms between Advanced Ceramics and Thin Metal Films.
Abstract
The technological impact of silicon carbide, SiC, covers two distinctly diverse areas: (a) as a high-strength structural ceramic, and (b) as a high-temperature wide bandgap semiconductor. In both of these applications, metallization of the SiC surface is a necessary and important procedure. From the structural point of view, a large complex shape can be produced by joining together parts of small size and simple geometries via a metallic interlayer. From the electronic point of view, good ohmic and Schottky contacts with metals are prerequisites for SiC-based device technology. For both cases, the Ti/SiC system appears to provide desirable results. When the Ti/SiC system is annealed in the temperature range 600- 1200 deg C, phases such as Ti5Si3, TiSi2, TiC and Ti3SiC2, are reportedly formed (1-6). Mechanically, these reaction products provide good bonding characteristics to yield a joint of adequate strength; while electronically, the silicide and carbide phases are metallic and thus exhibit rectifying behavior as expected from Schottky barrier diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 1996
- Accession Number
- ADA317122
Entities
People
- Ignatius S. Tsong
Organizations
- Arizona State University