Gate-All-Around Devices and Circuits.
Abstract
The goal of this research activity is to improve the GAA technology, to apply it to the fabrication of CMOS circuits and to assess the radiation hardness of the devices. The test vehicle is a 1k SRAM which has to be demonstrated by September 1994. In the first year of activity, we have worked on the following topics: assessment of the pre-rad and post-rad characteristics of the transisters, improvement of processing (reduction of the gate oxide thickness, circuit design including issues aimed at improving the total-dose hardness.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1993
- Accession Number
- ADA317600
Entities
People
- D. Flandre
- J. P. Colinge
- J. P. Eggermond
- P. Francis
- X. Baie
Organizations
- UCLouvain