Growth and Structure of MBE-Deposited Iridium Silicide.

Abstract

We were able to form pure IrSi3 films temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. With our MBE growth techniques we also found a previously-unreported c-axis epitaxial IrSi3 growth mode at 700 deg C, found that the IrSi3 epitaxy on Si (111) was dominated by a Mode B orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSi3 on Si(111) was superior to that on Si(100).

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1996
Accession Number
ADA318382

Entities

People

  • Charles M. Falco

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Structure
  • Crystallites
  • Crystals
  • Detection
  • Detectors
  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • Infrared Detectors
  • Materials
  • Orientation (Direction)
  • Polycrystals
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.