Gallium Imide, (Ga(NH)3/2)n, A New Polymeric Precursor for Gallium Nitride Powders.

Abstract

The efficient preparation of a new polymeric gallium imide, (Ga(NH)3/2), from the reaction between Ga(NMe2)32 and NH3 at ambient temperatures is described. The gallium imide precursor is shown by TEM and XRD studies to yield, upon pyroysis, a rare cubic/hexagonal variety of gallium nitride, GaN. Some control over the average particle size of GaN in the nanosized region is achieved by application of various pyrolysis schemes.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1996
Accession Number
ADA318395

Entities

People

  • J. F. Janik
  • R. L. Wells

Organizations

  • Duke University

Tags

Communities of Interest

  • Weapons Technologies

DTIC Thesaurus Topics

  • Body Weight
  • Chemical Laboratories
  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Decomposition
  • Electron Diffraction
  • Gallium Nitrides
  • Materials
  • Military Research
  • Nitrides
  • Nitrogen Compounds
  • Particle Size
  • Particles
  • Phase Studies
  • Precursors
  • Pyrolysis

Fields of Study

  • Materials science

Readers

  • Organic Chemistry
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics