Oxide Substrates for GaN Thin Film Growth.
Abstract
We started the project a year ago to look for the feasibility of using alternative oxide lattice matching substrates for GaN thin film growth. In this contract, we are able to optimize the growth process to produce uncracked single crystals of LAO and LGO for substrate fabrication. We successfully grew LAO up to 50mm in diameter and LGO up to 40 mm in diameter. We have fabricated double-sided polished substrate wafers for testing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 03, 1996
- Accession Number
- ADA318413
Entities
People
- Bruce Chai