Statistical Theory of High-Mobility Quantum-Effect Devices.
Abstract
We have undertaken a theoretical study of the resonance properties of electronic and optoelectronic devices to understand the processes which control the resonance widths. Initially we considered quantum dot single-electron transistors and derived a universal statistical distribution of widths which has recently been confirmed experimentally. Next we applied related concepts to understand the long lived 'whispering gallery' resonances of optical resonators. This had led to the proposal of a new class of microcavity resonators, ARCs (Asymmetric Resonant Cavities) which have highly directional emission and controllable Q values. These resonators may have applications to micro-lasers, integrated optics and fiber-optic communications. We have undertaken a theoretical study of the resonance properties of electronic and optoelectronic devices to understand the processes which control the resonance widths. Initially we considered quantum dot single- electron transistors and derived a universal statistical distribution of widths which has recently been confirmed experimentally. Next we applied related concepts to understand the long-lived "whispering gallery" resonances of optical resonators. This had led to the proposal of a new class of micro-cavity resonators, ARCs (Asymmetric Resonant Cavities) which have highly directional emission and controllable Q values. These resonators may have applications to micro-lasers, integrated op tics and fiber-optic communications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 17, 1996
- Accession Number
- ADA318453
Entities
People
- A. D. Stone
Organizations
- Yale University