Study of Ultra-Low Resistivity Material for Monolithically Integrated Npn and Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors.

Abstract

The initial scope of this program was to develop ultra-low-resistivity GaAs-based materials for application to Npn and Pnp AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Due to early success in the program and to complement research and development activities at the U.S Army EPSD laboratory in Ft. Monmouth, NJ, the program scope was expanded to include photonic applications of HBTs including photodetector optical receivers and monolithic integration of PIN and HBT devices for high performance receivers.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1996
Accession Number
ADA318475

Entities

People

  • P. M. Enquist

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Bipolar Junction Transistors
  • Buildings And Structures
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Electronics Laboratories
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Photodetectors
  • Research Facilities
  • Transistors

Fields of Study

  • Materials science

Readers

  • Aerospace Test and Evaluation
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology