InAsSb(P)-InAsSb-InAs Long Wavelength Lasers.

Abstract

We have grown InAsSb/InAsSbP DH laser structures and InAsSb/GaSb superlattices on InAs substrates. Our V/III ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometer/hr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong up to room temperature. We have investigated the influences of growth conditions on the material parameters as well as examined the causes for non-radiative recombination, and have deduced that it mainly originates from the InAsSb/InAsSbP heterointerfaces, though our material has demonstrated increased radiative efficiency at temperatures up to 200 K.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1996
Accession Number
ADA318507

Entities

People

  • Dong Wu
  • Jin Xu
  • M. Erdtmann
  • M. Razeghi
  • Seungchan Kim

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Laser Applications
  • Laser Diodes
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Narrow Band Gap Semiconductors
  • Optical Properties
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy