Final Technical Report for JSEP Fellowship Executive Summary.
Abstract
Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross- sectional scanning tunneling microscopy (XSTM). This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum (UHV) system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross sections of self assembled InAs quantum dots, XSTM cross sections of quantum wires created by the strain induced lateral layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 16, 1996
- Accession Number
- ADA319318
Entities
People
- Warren Wu
Organizations
- University of Illinois Urbana–Champaign