AlGaN Channel Transistors for Power Management and Distribution.
Abstract
Contained within is the Final report of a Phase I SBIR program to develop AIGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AIGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase II Program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1996
- Accession Number
- ADA319426
Entities
People
- James M. Vanhove