Final Technical Report for JSEP Fellowship Executive Summary (Gross-Sectional Scanning/Tunneling Microscopy Investigations of Cleaned III-V Heterostructures).
Abstract
Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum (UHV) system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 16, 1996
- Accession Number
- ADA319819
Entities
People
- Warren Wu
Organizations
- University of Illinois Urbana–Champaign