Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Abstract
The electron affinity and Schottky barrier height of thin Cu and Zr films on diamond (100) substrates, cleaned at 500 degrees or 1150 degrees Celsius in UHV and terminated with oxygen or free of chemisorbed species, respectively, were correlated by means of UV photoemission spectroscopy. The achievement of NEA was dependent on the surface preparation before metal deposition and on the metal work function. The Schottky barrier height for clean surfaces was lower than those terminated by oxygen; the former exhibited an NEA. In all field emission measurements, a reduction in the threshold electric field was observed upon metal overgrowth. Free-standing, 4 mm diameter highly-textured (100) diamond membranes were obtained by coupling bias enhanced nucleation in a microwave plasma CVD reactor with an evolutionary texture selection growth process in a low pressure combustion flame reactor and subsequent etching of the Si substrate. High energy particle detectors were fabricated via patterning of microstrip electrodes on these membranes. These detectors were used to measure the energy spectra of a-particles at the Continuous Electron Beam Accelerator Facility and to determine the spatial resolution of these particles. The performance was similar to those obtained by monocrystalline detectors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1996
- Accession Number
- ADA319920
Entities
People
- P. K. Baumann
- Robert F Davis
- Robert J. Nemanich
- S. P. Bozeman
- Zlatko Sitar
Organizations
- North Carolina State University