Nucleon Bombarded Germanium Semiconductors, II,

Abstract

The electrical behavior (conductivity, thermoelectric power, etc.) of germanium semiconductors can be described quantitatively once the number of carriers is known. The number of electrons (N-type conduction) or the number of holes (P-type conduction), depending on the type and number of impurities present, can be determined from Hall effect measurements. It is assumed (and made plausible by experiment) that each impurity atom releases one carrier.

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 1948
Accession Number
ADA320516

Entities

People

  • K. Lark-horovitz
  • R. E. Davis
  • S. Siegel
  • W. E. Johnson

Organizations

  • Oak Ridge National Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alpha Bombardment
  • Alpha Particles
  • Conductivity
  • Deuterons
  • Electrons
  • Fast Neutrons
  • Germanium
  • Germanium Alloys
  • Hall Effect
  • Heat Treatment
  • Impurities
  • Low Temperature
  • Materials
  • Neutron Flux
  • Neutrons
  • Nucleons
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics