Multi-State Quantum Storage Devices.

Abstract

The purpose of this AASERT grant was to extend the work on resonant tunneling devices to include a new structure which has shown evidence of zero-bias memory switching and multi-state behavior. This device is known as a quantum storage device or QSD. This device features a triple barrier resonant tunneling device, yielding a three terminal device. Under the AASERT, extensive simulations were performed using the Schrodinger-Poisson and Wigner formalisms. Optimization of the QSD design to achieve high on-off resistance ratios is a main focus of the parameter study. Results to date will be described.

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Document Details

Document Type
Technical Report
Publication Date
Jan 27, 1997
Accession Number
ADA320923

Entities

People

  • Powers

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Algorithms
  • Current Density
  • Diodes
  • Electronics Laboratories
  • Quantum Tunneling
  • Quantum Wells
  • Resistance
  • Resonant Tunneling Diodes
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Subatomic Particles
  • Succinic Acid
  • Tunnel Diodes
  • Two Dimensional

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Urban Planning and Geography.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots