Ultra-Low Threshold Index-Confined Microcavity Lasers.

Abstract

This project first demonstrated ultra-low threshold lasing with a lower n-type AlAs/GaAs DBR and an upper dielectric DBR. The threshold was reduced to ^40 micro A for 3 micrometers laterally sized devices. This remains the lowest threshold that has been reproducibly achieved in the oxide-confined VCSELs to date. Oxide confinement is a key in achieving ultra low threshold. Studies have also shown that diffraction loss due to the optical penetration depth of the lasing mode into the lower AlAs/GaAs DBR is a real problem when the device size is made smaller than -3 micrometers diameter. The thickness of the oxide aperture layer is an important parameter in the mode confinement, and if the aperture is too thin higher efficiency is achieved at the expense of a large mode area (loss of optical confinement).

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA321098

Entities

People

  • Dennis Deppe

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Classification
  • Crystal Lattice Vibrations
  • Diameters
  • Diffraction
  • Efficiency
  • Laser Science
  • Lasers
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Oxides
  • Quantum Wells
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Surface Emitting Lasers
  • Thickness

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition