Ultrafast Electronic Processes in Semiconductor Nanostructures.
Abstract
We have made significant progress in our understanding of ultrafast electronic processes in semiconductor nanostructures by developing a detailed theory for electron-phonon many body interaction processes in GaAs quantum wires of 10-100 nanometers cross-sectional dimensions. Specifically, we have taken into account plasmon-plasmon and quasiparticle-phonon coupling effects in calculating femtosecond hot electron relaxation phenomena, showing that many-body coupling could lead to substantial enhancement in the energy loss rates of ultrafast electrons confined in semiconductor quantum wire nanostructures. We have also developed a quantitative theory, agreeing very well with experimental results, for electronic tunneling in GaAs-AlGaAs double quantum well structures taking Coulomb interaction induced many-body effects into account. We published 37 papers and produced 2 Ph.d.s under this project.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1996
- Accession Number
- ADA321311
Entities
People
- Sankar Das Sarma
Organizations
- University of Maryland