Study of Graded Channels in MODFETs on InP Substrates.

Abstract

Results from this contract was a successful demonstration for the first time of InP-based MODFETs operating above 125 deg C with minimal DC and RF degradation with record two dimensional electron sheet densities (>8.0 x 10(exp 12) /sq cm) The MODFET structure was double-doped and double-strained with a parabolically graded channel. To achieve this final result we performed fundamental experiments during the duration of the grant to study the spacer layer thickness, Schottky barrier enhancements and stress compensation schemes.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA321520

Entities

People

  • Glenn Martin
  • Lester Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Conduction Bands
  • Electrical Engineering
  • Electron Density
  • Electron Gas
  • Electrons
  • Energy Bands
  • Energy Levels
  • Free Electrons
  • Ground State
  • High Electron Mobility Transistors
  • Materials
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics