Monolithic P-I-n Multiple Quantum Well (MQW) Photorefractive Devices.

Abstract

In this paper we report a monolithic p-i-n multiple quantum-well (MOW) GaAlAs photorefractive device operating in reflection mode. The device structure consists of a photorefractive structure grown with low temperature grown (LTG)-GaAlAs charge blocking layers on top of a 20 period n-type GaAlAs/AlAs quarter wave stack mirror. The device operates by double passing mutually coherent beams through the photorefractive structure exhibiting nearly 0.23% input diffraction efficiency. The writing energy of approximately 2OnJ/sq cm is nearly seven (7) times better than those of previously reported devices.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA321632

Entities

People

  • Christos Hantzis
  • Parviz Tayebati

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Command And Control
  • Computer Science
  • Diffraction
  • Dynamic Range
  • Efficiency
  • Electric Fields
  • Films
  • Ion Implantation
  • Low Temperature
  • Measurement
  • Optical Lattices
  • Quantum Wells
  • Reflectivity
  • Semiconductors
  • Signal Processing
  • Spectra

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing