Monolithic P-I-n Multiple Quantum Well (MQW) Photorefractive Devices.
Abstract
In this paper we report a monolithic p-i-n multiple quantum-well (MOW) GaAlAs photorefractive device operating in reflection mode. The device structure consists of a photorefractive structure grown with low temperature grown (LTG)-GaAlAs charge blocking layers on top of a 20 period n-type GaAlAs/AlAs quarter wave stack mirror. The device operates by double passing mutually coherent beams through the photorefractive structure exhibiting nearly 0.23% input diffraction efficiency. The writing energy of approximately 2OnJ/sq cm is nearly seven (7) times better than those of previously reported devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1996
- Accession Number
- ADA321632
Entities
People
- Christos Hantzis
- Parviz Tayebati