Low Temperature Epitaxial Growth of CoGe(001)/GaAs(100) Films Using the Partially Ionized Beam Deposition Technique,
Abstract
The partially ionized beam (PIB) deposition technique was used to deposit CoGe2(001) thin films heteroepitaxially on GaAs(100) substrates for the first time. The epitaxial arrangement was CeGe2(001)/GaAs(100). It was found that the best epitaxy was obtained with an ion energy around 1100 eV and with a substrate temperature of 280 deg C. The wafers were treated only by immersion in HF:H20 1:10 immediately prior to deposition. Contacts grown at the optimal epitaxial formation conditions displayed ohmic behavior, while contacts grown at higher or lower substrate temperatures had rectifying behavior. Epitaxial formation of CeGe2, a high-melting point, low resistivity cobalt germanide phase, offers the possibility of forming a stable contact to n-GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1996
- Accession Number
- ADA321844
Entities
People
- K. E. Mello
- R.-m. Lu
- S. L. Lee
- S. P. Murarka
- S. R. Soss
Organizations
- United States Army Armament Research, Development and Engineering Center