Epitaxial Growth and Electro-Optical Properties of Metal GaAs Superlattices.

Abstract

Under the SDIO/IST support (grant N00014-90-J-1761), we have made progress in the investigation of the metal systems that are thermodynamically stable on GaAs. Successful growth of the single phase PtGa2 and CoGa on GaAs has been demonstrated by MOCVD (metal organic chemical vapor deposition) using mixed-metal organometallic precursors of limited volatility and by MBE (molecular beam epitaxy). Fundamental understanding of these thermodynamically stable compounds has been obtained. Our accomplishments include the studies of the stability, the growth process, the chemical, physical, and electrical properties of metal/GaAs systems.

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Document Details

Document Type
Technical Report
Publication Date
May 30, 1995
Accession Number
ADA322015

Entities

People

  • Kang L. Wang
  • R. Stanley Williams

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electrical Properties
  • Electron Emission
  • Energy Bands
  • Epitaxial Growth
  • Materials Processing
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Photoexcitation
  • Semiconductors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.