A Process Model and Complementary Experiments for the Electron Cyclotron Resonance (ECR) Technology: Application to Deposition and Etching. Phase II.

Abstract

This Phase II SBIR project was undertaken to model the Electron Cyclotron Resonance (ECR) based plasma processing with a view to understanding plasma mechanisms and aiding in process and equipment design. Models of various complexity levels were successfully developed and applied to ECR discharges. The computer codes were used to study the effects of flow rates, pressure, microwave power and reactor geometry parameters on the process figures of merit. This allows understanding of the ECR mechanisms in various electropositive and reactive discharges. The model and code are useful in design of new generation plasma equipment and also in process design and optimization. A graphical user interface was also developed for the easy use of one of the codes.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1996
Accession Number
ADA323298

Entities

People

  • F. Dejong
  • M. Meyyappan
  • R. C. Buggeln
  • T. R. Govindan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemical Vapor Deposition
  • Computers
  • Crystal Structure
  • Cyclotron Resonance
  • Electromagnetic Radiation
  • Electron Density
  • Electron Energy
  • Electrons
  • Flow Rate
  • Fluid Flow
  • Geometry
  • Heat Transfer
  • Military Research
  • Semiconductor Manufacturing
  • Thermal Conductivity
  • Two Dimensional

Readers

  • Computational Fluid Dynamics (CFD)
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics