Growth of Hg-Based Cuprate Films on Lanthanum-Aluminate Using Fast-Temperature Ramping Hg-Vapor Annealing.
Abstract
Fast temperature ramping Hg vapor annealing (FTRA) process has been used for growth of superconducting Hg-based cuprate thin films on (100) LaAlO3 substrates. The film/substrate interface chemical reactions and the formation of CaHgO2 impurity phase have been effectively reduced with adoption of FTRA process. Zero-resistance superconducting transition temperature of 128 deg K and critical current density of up to 1.4 x 10(exp 6) A/cu cm at 77 K and 2.5 x 10(exp 5) A/cu cm at 110 deg K and zero field have been obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1997
- Accession Number
- ADA323736
Entities
People
- Donald W. Eckart
- Judy Z. Wu
- Sangho H. Yun
- Steven C. Tidrow
Organizations
- United States Army Research Laboratory