Metal-Semiconductor-Metal Photodetectors for Optical Interconnect Applications.

Abstract

A method of lowering the dark current of silicon metal-semiconductor-metal (MSM) photodetectors was developed. MSM photodetectors have been the focus of much recent research. The monolithic design, integratability with standard VLSI circuitry, high speed performance, and applicability to 2-D array layouts make them a good candidate for optical interconnect architectures. In many optical interconnect schemes, the combination of low optical power emission from optical sources, low cost and low efficiency optical guiding or focusing systems and realistic alignment limitations often result in low optical signal level reaching the photodetector. To maintain an adequate signal to noise ratio for high data rates, the noise contributed by each component in the interconnect scheme must be minimized. This report reviews MSM photodetector operating characteristics, fabrication, and an analysis of a method of reducing the detector dark current.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1997
Accession Number
ADA324173

Entities

People

  • Franz Haas

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Circuit Interconnections
  • Computer-Aided Design
  • Data Rate
  • Detectors
  • Diagrams
  • Energy Bands
  • Fabrication
  • Fermi Levels
  • Light Sources
  • Metal-Semiconductor-Metal Photodetectors
  • Optical Interconnects
  • Physical Properties
  • Semiconductors
  • Silicon Carbide
  • Standards
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics