1996 Spring MRS Meeting, Symposium B: Defects and Interfaces in Lattice-Mismatched Semiconductor Heterostructures,

Abstract

Defects and Interfaces in Latice-Mismatched Heterostructures was considered a great success by all concerned. The symposium emphasized applications of lattice-mismatched semiconductor heterostructures for state of the art electronic and optoelectronic devices included blue green lasers fabricated from II-VI semiconductors, various quantum structures fabricated with III-V semiconductors, and high speed field effect transistors (FETs) utilizing strain Si and SiGe layers on relaxed SiGe buffer layers.

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Document Details

Document Type
Technical Report
Publication Date
Apr 10, 1996
Accession Number
ADA324603

Entities

People

  • P. M. Mooney

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Electrical Engineering
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Geography
  • Heterojunctions
  • High Electron Mobility Transistors
  • Laser Diodes
  • Materials
  • Materials Science
  • Military Research
  • Optical Properties
  • Power Electronics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing