Engineered GaN Substrates.
Abstract
This the second report of CBL's progress on its Phase 1 SBIR contract. During the first reporting period, CBL was focused on establishing a working company structure. This included hiring personnel, developing a business structure and detailing a research plan. In this period CBL has begun conducting GaN crystal growth and fundamental etching experiments. The goal of this SBIR funded project is to develop an in-situ etching technique for substrate removal; however, while the process is in the design phase we have conducted ex-situ etching studies for post growth substrate removal. These results are discussed in this report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 09, 1996
- Accession Number
- ADA324733