Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Abstract
Real time in-situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Oriented nucleation and growth of diamond on Ni was repeatedly achieved using this process. The evolution from diamond surfaces to metal-diamond interfaces has also been studied. The electron affinity and the Schottky barrier height of Zr and Cu films a few A thick and deposited in UHV onto IIb diamond substrates cleaned by different anneals and plasma treatments in UHV were correlated. The initial surfaces were terminated with oxygen or free of chemisorbed species. UPS allowed the determination of a positive electron affinity or an NEA before and after metal deposition. The Schottky barrier height changed little in the presence or absence of chemisorbed species at the interface. An NEA was observed for Zr on diamond independent of the surface termination. For Cu, the surface cleaning prior to metal deposition had a more significant effect. The Schottky barrier height changed strongly depending on the chemical species at the interface. An NEA was only detected for Cu on clean diamond surfaces. The differences between Zr on one hand and Cu on the other are correlated with differences in interface chemistry and structure.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1997
- Accession Number
- ADA324758
Entities
People
- Robert F Davis
- Robert J. Nemanich
- Zlatko Sitar
Organizations
- North Carolina State University