A Cascadable, Monolithic Laser/Modulator/Amplifier Transmitter.
Abstract
High performance devices were designed and fabricated based on gas source molecular beam epitaxially (GSMBE) grown InGaAsP. These included low threshold, strained InGaAsP multiple quantum well (MQW) Fabry Perot lasers which exhibited the lowest threshold current densities ever achieved for GSMBE grown material operating at 1.3 um; very high on/off ratio (40 dB) Mach-Zehnder modulators and high gain (25 dB) semiconductor optical amplifiers. These devices were developed to demonstrate the integration of multifunctional photonic integrated circuits employing one or more of these devices in any combination needed for a given application. This led to a demonstration of a very simple and flexible integration technology based on a modified twin waveguide structure which completely eliminated complicated regrowth processing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1997
- Accession Number
- ADA325020
Entities
People
- Stephen R. Forrest
Organizations
- Princeton University