Photothermal Imaging of Indentation in Silicon Nitride.
Abstract
Theoretical model for determination of temperature distribution in ceramics with a lateral crack is developed for a case of photothermal measurements of indentation cracks. The lateral crack is modeled by a horizontal buried layer with a given thermal resistance. A possible penetration of the pump beam light in ceramics is taken into account. The dependence of photo acoustic and photodeflection signals on the thermal resistance and pump beam light in ceramics are investigated. Photodeflection and piezoelectric images of indentation cracks in silicon nitride have been obtained. It is shown that these images have different structure and can be used for the development of a complex approach to the problem of indentation crack imaging in silicon nitride ceramics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1996
- Accession Number
- ADA325054
Entities
People
- Alexej L. Glazov
- Kyrill L. Muratikov