(AASERT-93) Field-Effect-Controlled, Coulomb-BlocKage Single-Electron Transistor in Silicon.

Abstract

X-ray nanolithography for device fabrication was extended farther than previously reported. A new substrate photoelectron effect in x-ray nanolithography was observed. A way to circumvent this apparent limit to the resolution limits of x-ray nanolithography for real devices was found. Novel coulomb-blockade devices have been fabricated using this modified process. Preliminary measurements are underway on devices which should allow a better understanding of how the coulomb blockade disappears as coupling of the quantum dot to the environment increases via either a tunnel barrier or a quantum point contact.

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Document Details

Document Type
Technical Report
Publication Date
Mar 10, 1997
Accession Number
ADA325616

Entities

People

  • David Carter
  • Dimitri A Antoniadis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Electrical Engineering
  • Electrons
  • Environment
  • Fabrication
  • Field Effect Transistors
  • Lithography
  • Measurement
  • Nanofabrication
  • Nanolithography
  • Photoelectrons
  • Quantum Dots
  • Semiconductors
  • Substrates
  • Transistors
  • X Ray Lithography
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing