Impurity-Related Optical Emission Alloys and Superlattices.
Abstract
This report describes the results of experimental investigations of impurity-related, near infrared optical emission from crystalline silicon and from silicon germanium superlattices grown by molecular beam epitaxy (MBE). Radiative impurities can be introduced into silicon germanium superlattices by post growth ion implantation or by co-evaporation during growth. The research has demonstrated, using beryllium (Be) impurities, that radiative Be-pairs can be formed during MBE growth of silicon germanium superlattices. Secondary ion mass spectroscopy (SIMS) measurements reveal that the Be can be localized in the alloy layers of the superlattice. Investigations to date of superlattices (multi-quantum-wells) made up of alternating layers of silicon and a selected, Be-doped, silicon germanium alloy show that quantum-confined bound- exciton emission can be observed when the alloy layers are below 5.0 nm in thickness. Spectral blue-shifts caused by quantum confinement have been observed. The results of theoretical calculations reveal that the isoelectronic bound-exciton emission from the Be-complex should be able to produce gain and laser action in a suitably defined, silicon-based, optical waveguide structure.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1997
- Accession Number
- ADA325631
Entities
People
- Dennis G. Hall
Organizations
- University of Rochester