Rapid Thermal Processing of Semiconductors at High Vapor Densities.
Abstract
P-polarized reflectance spectroscopy (PRS) was developed as a method of real-time process monitoring. The relation between the measured reflectance and the chemical kinetics driving the growth of an epitaxial film on the surface of a substrate has been established for the conditions of pulsed chemical beam epitaxy. The precision of the monitoring of molecular layer growth by PRS has been evaluated. Also, limitations to the accuracy of PRS monitoring have been assessed. The design of the RTOMCVD reactor has been completed. Experimental validation of predictions of temperature distributions and flow have been initiated. We have applied the reduced basis method for control of the viscous incompressible gas flow dynamics by boundary surface controls which suggests that real time simulation and control can be done by lower order reduced order control systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1997
- Accession Number
- ADA325751
Entities
People
- H. Thomas Banks
- K. J. Bachmann
Organizations
- North Carolina State University