Tunable Electrically-Pumped Rare-Earth-Doped Nitride Lasers.
Abstract
This is the final report for an ASFOSR grant studying rare earth doped GaN for tunable laser sources. The report consists of a number of publications by the researchers. The work addresses the behavior of the rare earth erbium (Er) doped into GaN, with co-dopants oxygen and fluorine. The Er luminescence properties were studied versus temperature (10K, 77K, and up to room temperature), annealing treatment (number of anneals, duration, and temperature), co-dopant concentration (over three orders of magnitude) and the Er density. Co-dopants were essential to the successful detection of luminescence in the 1550 nm (4I13/2 - 4I15/2) band. An annealing treatment following the ion implantation of the Er and co-dopant ions was also required. Photo-luminescence lifetime data versus Er density, pump wavelength, and temperature are presented Photo-luminescence excitation PLE) spectroscopy over the wavelength range 770-1010 nm using a tunable Ti:Sapphire laser, at 77K and room temperature, showed the usual thermal quenching for most pump wavelengths, but not all. A metal-insulator-n-type diode structure also exhibited 1550 nm luminescence. Cathodo-luminescence measurements showed weak 980 nm luminescence while the PLE measurements did not. A list of publications and presentations related to this work is also included.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1996
- Accession Number
- ADA325752
Entities
People
- Jacques I. Pankove
- Robert J. Feuerstein
Organizations
- University of Colorado Boulder